Posted on February 10, 2025 by Jeff -
These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.
Features
- Low on-resistance RDS(on) and gate charge Qg
- dv/dt ruggedness
- Avalanche capability
- International standard packages
Benefits
- Low conduction losses
- Minimized parallel connection effort
- Simplified driver design with minimal driver losses
- Simplified thermal design
- Increased power density
Applications
- Synchronous rectification in switching
- Power supplies
- Motor control (48V-80V systems)
- DC-DC converters
- Uninterruptible power supplies
- Electric forklifts
- Class-D audio amplifiers
- Telecom systems
- Battery energy storage systems (BESS)
- Battery chargers
- Battery formation
- DC/battery load switch
Posted on October 3, 2024 by Jeff -
Taiwan Semiconductor introduces the 4th generation 600V NE series super junction MOSFETs, which are designed to improve efficiency and power density in high-voltage applications. The latest NE super junction MOSFET technology enables exceptionally low on-state resistance (Ron) and low gate charge capacitance (Qg). The achievement of 30% FOM (figure-of-merit; Ron * Qg) improvement results in higher value in many HV applications vs alternative options.
Features
- 4th Generation Super Junction technology
- Low gate charge capacitance
- Excellent switching performance
- High gate noise immunity
Applications
- Off-line switching power conversion
- Server power supplies
- HV motor drivers
- UPS systems
- Lighting controls
Posted on June 30, 2020 by Jeff -
The IX4426, IX4427, and IX4428 are dual high-speed, low-side gate drivers. Each of the two outputs can source and sink 1.5A of peak current with rise and fall times of less than 10ns. The inputs of each driver are TTL and CMOS compatible and are virtually immune to latch-up. Low propagation delay times and fast, matched rise and fall times make the IX4426, IX4427, and IX4428 ideal for high-frequency and high-power applications.
The IX4426 is configured as a dual inverting driver; the IX4427 is configured as a dual noninverting driver; and the IX4428 is configured with one inverting driver and one noninverting driver. All three devices are available in a standard eight-pin SOIC package (N suffix) and an eight-pin DFN package (M suffix).
Features
- 1.5A Peak Output Current
- Wide Operating Voltage Range: 4.5V to 35V
- -40°C to +125°C Operating Temperature Range
- Latch-up Protected to 1.5A
- TTL- and CMOS-Compatible Inputs
- Fast Rise and Fall Times
- Low Power Consumption
Applications
- MOSFET Driver
- Switching Power Supplies
- Motor Controls
- DC-to-DC Converters
- Pulse Transformer Driver
Click here for a datasheet.
Posted on June 30, 2020 by Jeff -
The IX4351NE is designed specifically to drive SiC MOSFETs and high-power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
Desaturation detection circuitry detects an overcurrent condition of the SiC MOSFET and initiates a soft turn-off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller.
The IX4351NE is rated for an operational temperature range of -40°C to +125°C and is available in a thermally enhanced 16-pin power SOIC package.
Posted on October 30, 2019 by Jeff -
These MOSFET devices have been extensively tested and approved for the rigorous automotive applications.
Posted on October 9, 2016 by Ryan McCoy -
Taiwan Semiconductor is a leading supplier of discrete power semiconductor products. TSC’s product portfolio includes power MOSFETs, power rectifiers, TVS/ESD protection, linear and switching voltage regulators, Hall effect sensors, and power control ICs for lighting applications. Taiwan Semiconductor’s wholly owned production facilities in China and Taiwan are fully certified to current automotive and environmental standards including TS16949, ISO9001, and ISO14001.
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