IX4352NE Series – Low-Side Gate Driver
The IX4352NE gate driver is designed specifically to drive SiC MOSFETs and high-power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
Desaturation detection circuitry senses an overcurrent condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The non-inverting logic input, IN, is TTL and CMOS compatible; internal level shifters provide the necessary bias to accommodate negative gate drive bias voltages. Additional protection features include UVLO detection and thermal shutdown. An open drain FAULT output signals a fault condition to the microcontroller.
The IX4352NE is available in a thermally enhanced 16-pin narrow SOIC package.
Features
- Separate 9A peak source and sink outputs
- Operating Voltage Range: VDD-VSS up to 35V
- Internal charge pump regulator for selectable negative gate drive bias
- Desaturation detection with soft shutdown sink driver
- TTL and CMOS compatible input
- Under Voltage lockout (UVLO)
- Thermal shutdown
- Open drain FAULT output
Applications
- On-board charger
- DC-DC converter
- Electric vehicle charging station
- Motor controller
- Power Inverter
Click here for a datasheet.