X4 Class Series – 200V Power MOSFETs

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.

Features

• Low on-resistance RDS(on) and gate charge Qg
• dv/dt ruggedness
• Avalanche capability
• International standard packages

Benefits

• Low conduction losses
• Minimized parallel connection effort
• Simplified driver design with minimal driver losses
• Simplified thermal design
• Increased power density

Applications

• Synchronous rectification in switching
• Power supplies
• Motor control (48V-80V systems)
• DC-DC converters
• Uninterruptible power supplies
• Electric forklifts
• Class-D audio amplifiers
• Telecom systems
• Battery energy storage systems (BESS)
• Battery chargers
• Battery formation
• DC/battery load switch