4th Generation 600V Super Junction MOSFETs
Taiwan Semiconductor introduces the 4th generation 600V NE series super junction MOSFETs, which are designed to improve efficiency and power density in high-voltage applications. The latest NE super junction MOSFET technology enables exceptionally low on-state resistance (Ron) and low gate charge capacitance (Qg). The achievement of 30% FOM (figure-of-merit; Ron * Qg) improvement results in higher value in many HV applications vs alternative options.
Features
- 4th Generation Super Junction technology
- Low gate charge capacitance
- Excellent switching performance
- High gate noise immunity
Applications
- Off-line switching power conversion
- Server power supplies
- HV motor drivers
- UPS systems
- Lighting controls
